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Volume: 29 | Article ID: art00051_2
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Industrial printed Seed-Layer for Front Side Metallization of Crystalline Silicon Solar Cells
Uwe Buerklin
  DOI :  10.2352/ISSN.2169-4451.2013.29.1.art00051_2  Published Online :  January 2013
Abstract

An industrial scale ink-jet and light induced plating (LIP) based front side metallization process for crystalline silicon solar cells is presented. Via Schmid ink-jet printer “NanoJet” a < 1μm thin seed layer is printed that opens the isolating SiNx antireflective layer and creates a metal contact from cell surface to cell by burn-in in a high temperature furnace. Via LIP, a highly conductive silver layer is grown on the printed areas.Following this strategy, fine finger lines with a width of 30-35μm after printing and 50-55μm after plating on mono- and poly-crystalline silicon cells were deposited. This lead to a 20% reduction of silver consumption and a gain of 0.3%abs of cell efficiency compared to standard screen printing process.

Journal Title : NIP & Digital Fabrication Conference
Publisher Name : Society of Imaging Science and Technology
Publisher Location : 7003 Kilworth Lane, Springfield, VA 22151, USA
Subject Areas :
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 DOI 10.2352/ISSN.2169-4451.2013.29.1.art00051_2
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  Cite this article 

Uwe Buerklin, "Industrial printed Seed-Layer for Front Side Metallization of Crystalline Silicon Solar Cells"  in Proc. IS&T Int'l Conf. on Digital Printing Technologies and Digital Fabrication (NIP29),  2013,  pp 472 - 475,  https://doi.org/10.2352/ISSN.2169-4451.2013.29.1.art00051_2

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Copyright © Society for Imaging Science and Technology 2013
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NIP & Digital Fabrication Conference
nip digi fabric conf
2169-4451
Society of Imaging Science and Technology
7003 Kilworth Lane, Springfield, VA 22151, USA
2169-4451(20130101)2013:2L.472;1-
nip_v2013n2/splitsection51.xml
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Articles
Industrial printed Seed-Layer for Front Side Metallization of Crystalline Silicon Solar Cells
BuerklinUwe
01012013
2013
2
472
475
2013
An industrial scale ink-jet and light induced plating (LIP) based front side metallization process for crystalline silicon solar cells is presented. Via Schmid ink-jet printer “NanoJet” a < 1μm thin seed layer is printed that opens the isolating SiNx antireflective layer and creates a metal contact from cell surface to cell by burn-in in a high temperature furnace. Via LIP, a highly conductive silver layer is grown on the printed areas.Following this strategy, fine finger lines with a width of 30-35μm after printing and 50-55μm after plating on mono- and poly-crystalline silicon cells were deposited. This lead to a 20% reduction of silver consumption and a gain of 0.3%abs of cell efficiency compared to standard screen printing process.