Back to articles
Articles
Volume: 22 | Article ID: art00005_1
Image
The Optical-drive Type Organic Field Effect Transistor Utilizing the Organic Photoreceptor
Norio Nagayama
Jin Yoshikawa
Masaaki Yokoyama
  DOI :  10.2352/ISSN.2169-4451.2006.22.1.art00005_1  Published Online :  January 2006
Abstract

By combining the n-type organic field-effect-transistor (OFET) and the double-layered hole-transportable organic photoreceptor (or organic photoconductor: OPC), an optical-drive type OFET was achieved. In this device, the change of electric potential in the OPC is detected as the channel current of the OFET. This device showed the increase in the source-drain current by the laser irradiation (780 nm) under applied the gate voltage. On the other hand, the current did not change by the laser irradiation, when there was no gate voltage. These results indicated that this current increasing by laser irradiation was originates from the drive of the OPC. Furthermore, the current hysteresis by the charge storage at the interface between OPC and insulator was confirmed, and the erasure of such stored charges was achieved by applying a reverse gate bias.

Journal Title : NIP & Digital Fabrication Conference
Publisher Name : Society of Imaging Science and Technology
Publisher Location : 7003 Kilworth Lane, Springfield, VA 22151, USA
Subject Areas :
Views 17
Downloads 0
 DOI 10.2352/ISSN.2169-4451.2006.22.1.art00005_1
 articleview.views 17
 articleview.downloads 0
  Cite this article 

Norio Nagayama, Jin Yoshikawa, Masaaki Yokoyama, "The Optical-drive Type Organic Field Effect Transistor Utilizing the Organic Photoreceptor"  in Proc. IS&T Int'l Conf. on Digital Printing Technologies (NIP22),  2006,  pp 17 - 20,  https://doi.org/10.2352/ISSN.2169-4451.2006.22.1.art00005_1

 Copy citation
  Copyright statement 
Copyright © Society for Imaging Science and Technology 2006
72010410
NIP & Digital Fabrication Conference
nip digi fabric conf
2169-4451
Society of Imaging Science and Technology
7003 Kilworth Lane, Springfield, VA 22151, USA
2169-4451(20060101)2006:1L.17;1-
nip_v2006n1/splitsection5.xml
/ist/nipdf/2006/00002006/00000001/art00005
Articles
The Optical-drive Type Organic Field Effect Transistor Utilizing the Organic Photoreceptor
NagayamaNorio
YoshikawaJin
YokoyamaMasaaki
01012006
2006
1
17
20
2006
By combining the n-type organic field-effect-transistor (OFET) and the double-layered hole-transportable organic photoreceptor (or organic photoconductor: OPC), an optical-drive type OFET was achieved. In this device, the change of electric potential in the OPC is detected as the channel current of the OFET. This device showed the increase in the source-drain current by the laser irradiation (780 nm) under applied the gate voltage. On the other hand, the current did not change by the laser irradiation, when there was no gate voltage. These results indicated that this current increasing by laser irradiation was originates from the drive of the OPC. Furthermore, the current hysteresis by the charge storage at the interface between OPC and insulator was confirmed, and the erasure of such stored charges was achieved by applying a reverse gate bias.