By combining the n-type organic field-effect-transistor (OFET) and the double-layered hole-transportable organic photoreceptor (or organic photoconductor: OPC), an optical-drive type OFET was achieved. In this device, the change of electric potential in the OPC is detected as the channel current of the OFET. This device showed the increase in the source-drain current by the laser irradiation (780 nm) under applied the gate voltage. On the other hand, the current did not change by the laser irradiation, when there was no gate voltage. These results indicated that this current increasing by laser irradiation was originates from the drive of the OPC. Furthermore, the current hysteresis by the charge storage at the interface between OPC and insulator was confirmed, and the erasure of such stored charges was achieved by applying a reverse gate bias.