The opportunity to deliver unprecedented material and device performance by utilizing unique properties of nanomaterials has generated tremendous interest in both the academia and the industries. In this work, we demonstrate the successful synthesis and printing of quasi-two and three-dimensional (D) inorganic oxide semiconductors with controlled morphologies on a number of device substrates via an environmentally-benign process. Compared to previously reported data of similar nature, a high Hall-effect mobility (∼ 50cm²V⁻¹s⁻¹) is obtained with our nanomaterial-based inorganic printed semiconductor. Using these nanomaterials, a rapid printing process has been developed to strategically pattern features in the millimeter to submicrometer length scale regimes. We show also the seamless integration of these nanomaterials to obtain high performance electronic devices, for example thin-film field-effect transistors (TFTs) with the printed semiconductor as the active channels. Excellent device performances with high field-effect mobilities, μ_eff > 20cm²V⁻¹s⁻¹, and respectably high drain current on-to-off ratios, I_ON/OFF > 10⁴, are obtained with our TFTs.