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Volume: 19 | Article ID: art00023_1
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PC Surface Charge Density from a Vertically Gaussian, Laterally Exposure-Based Volume Charge Distribution in the CGL
  DOI :  10.2352/ISSN.2169-4451.2003.19.1.art00023_1  Published OnlineJanuary 2003
Abstract

The surface charge density from a physically plausible volume charge density in the Charge Generation Layer (CGL) is numerically obtained and analyzed. The initial CGL volume charge density is Gaussian in the vertical direction and its lateral variation is obtained from the convolutional laser exposure equations and empirical Photo-Induced Discharge Characteristics (PIDC). The ideal surface charge density without lateral broadening obtained from the PIDC is compared with the resulting charge density after all the holes arrive at the surface. Various Charge Transport Layer (CTL) thicknesses, line widths, and laser spot sizes are used to characterize the effect of these parameters. It is found that the laser spot size has a more significant impact on line broadening than the CTL thickness.The field dependence of mobility was examined in isotropic materials using a diagonal tensor matrix. The field dependent mobility resulted in submicron line broadening even for a large CTL thickness. Thus line blurring arising from charge transport phenomena is negligibly small in isotropic materials.

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Jang Yi, Richard B. Wells, "PC Surface Charge Density from a Vertically Gaussian, Laterally Exposure-Based Volume Charge Distribution in the CGLin Proc. IS&T Int'l Conf. on Digital Printing Technologies (NIP19),  2003,  pp 91 - 96,  https://doi.org/10.2352/ISSN.2169-4451.2003.19.1.art00023_1

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