Pentacene is the best performing organic for thin-film fieldeffect transistor (TFT) applications and its performance rivals that of a-Si:H. We show how to fabricate pentacene TFT with source and drain electrodes lithographically patterned, before the deposition of the pentacene layer on them, and concurrently achieve performance equal to that of TFT fabricated with the reverse layering sequence. We also present a novel method for subtractive patterning of the pentacene layer that does not affect its transport properties. Earlier results on high performance organic TFT at low operating voltage are also presented.