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Volume: 16 | Article ID: art00007_1
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Electromigration in TaAl Thin Film Heater Material
Yimin Guan
Robert Cornell
  DOI :  10.2352/ISSN.2169-4451.2000.16.1.art00007_1  Published Online :  January 2000
Abstract

Electromigration is usually observed in metal conductive lines of electronics chips. However, under conditions of high temperature and high current density, electro-migration will also occur in thin film resistor material. The electromigration in a thin film resistor will cause resistance degradations and result in resistor opens.In this paper, electromigration failure mechanism in TaAl thin film resistor is discussed based on microstructural analysis. In addition, resistance degradations due to electromigration are characterized, and a model based on experimental data is generated to quantitatively describe this new phenomenon.

Journal Title : NIP & Digital Fabrication Conference
Publisher Name : Society of Imaging Science and Technology
Publisher Location : 7003 Kilworth Lane, Springfield, VA 22151, USA
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 DOI 10.2352/ISSN.2169-4451.2000.16.1.art00007_1
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Yimin Guan, Robert Cornell, "Electromigration in TaAl Thin Film Heater Material"  in Proc. IS&T Int'l Conf. on Digital Printing Technologies (NIP16),  2000,  pp 32 - 37,  https://doi.org/10.2352/ISSN.2169-4451.2000.16.1.art00007_1

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Society of Imaging Science and Technology
7003 Kilworth Lane, Springfield, VA 22151, USA
2169-4451(20000101)2000:1L.32;1-
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Articles
Electromigration in TaAl Thin Film Heater Material
GuanYimin
CornellRobert
01012000
2000
1
32
37
2000
Electromigration is usually observed in metal conductive lines of electronics chips. However, under conditions of high temperature and high current density, electro-migration will also occur in thin film resistor material. The electromigration in a thin film resistor will cause resistance degradations and result in resistor opens.In this paper, electromigration failure mechanism in TaAl thin film resistor is discussed based on microstructural analysis. In addition, resistance degradations due to electromigration are characterized, and a model based on experimental data is generated to quantitatively describe this new phenomenon.