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Volume: 14 | Article ID: art00049_2
Development of Negative Charge a-Si Photoreceptor Drum
  DOI :  10.2352/ISSN.2169-4451.1998.14.1.art00049_2  Published OnlineJanuary 1998

It has been said that when manufacturing negative charge photoreceptor drum using high frequency plasma CVD, doping V-group element to carrier blocking layer has been considered necessary. However, by investigating the influence of impurity-doping on the characteristics of a photoreceptor drum, we found that it is possible to manufacture a negative charge a-Si photoreceptor drum without doping. We've confirmed that the electric potential characteristics and reliability of a negative charge a-Si photoreceptor drum are almost the same as a existing positive charge a-Si photoreceptor drum.In addition, the fact that potential drop by erase light of longer wavelength is smaller at a negative charge a-Si photoreceptor drum shows the possibility for developing a high charge type a-Si drum for use with near infrared light.

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Akihiko Ikeda, Hideaki Fukunaga, Michinobu Tsuda, "Development of Negative Charge a-Si Photoreceptor Drumin Proc. IS&T Int'l Conf. on Digital Printing Technologies (NIP14),  1998,  pp 532 - 534,

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