This paper presents a newly developed global shutter proximity capacitance CMOS image sensor capable of high-speed and high-precision capacitance detection using noise cancellation technology. The chip was fabricated by a 0.18 μm CMOS process technology. It integrates high-density Si trench capacitors as in-pixel memories and features a 320H × 640V pixel array with a pixel size of 12 μmH × 6 μmV. Experimental results demonstrate that the sensor successfully captures distortion-free capacitance images and simultaneously achieves a high frame rate of 90 fps and a high detection precision of 12 zF. Furthermore, a burst mode utilizing in-pixel memories enables continuous signal acquisition, achieving an unprecedented detection speed of 167 kfps. The developed sensor is expected to significantly improve inspection efficiency in diverse fields, including manufacturing and life sciences.