Back to articles
Proceedings Paper
Volume: 37 | Article ID: ISS-276
Image
A Simple Model for Characterizing and Simulating Dark Noise in CMOS Sensors
  DOI :  10.2352/EI.2025.37.7.ISS-276  Published OnlineFebruary 2025
Abstract
Abstract

Gaussian distribution models are widely used for characterizing and modeling noise in CMOS sensors. Although it provides simplicity and speeds needed in real-time applications, it is usually not a very good representation of dark current characteristics observed in real devices. The statistical distribution of CMOS sensor dark noise is typically right-skewed with a long tail, i.e. with more “hot” pixels than described in a normal distribution. Furthermore, the spatial distribution in real devices typically exhibit a 1/f-like power spectrum instead of a flat spectrum from a simple Gaussian distributions model. When simulating sensor images, for example generating images and videos for training and testing image processing algorithms, it is important to reproduce both characteristics accurately. We propose a simple convolution-type algorithm using seed images with a log-normal distribution and randomized kernels to more accurately reproduce both statistical and spatial distributions. The convolution formulation also enables relatively easy GPU acceleration to support real-time execution for driving simulation platforms.

Subject Areas :
Views 0
Downloads 0
 articleview.views 0
 articleview.downloads 0
  Cite this article 

Steve Wang, Eiichi Funatsu, Boyd Fowler, "A Simple Model for Characterizing and Simulating Dark Noise in CMOS Sensorsin Electronic Imaging,  2025,  pp 276-1 - 276-4,  https://doi.org/10.2352/EI.2025.37.7.ISS-276

 Copy citation
  Copyright statement 
Copyright © 2025, Society for Imaging Science and Technology
ei
Electronic Imaging
2470-1173
2470-1173
Society for Imaging Science and Technology
IS&T 7003 Kilworth Lane, Springfield, VA 22151 USA