University of Grenoble Alpes, University of Savoie Mont-Blanc, France
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The integration of trench vertical transfer gates in an indirect time of flight pixel has been studied through TCAD & optical simulations. A small fast photo-gate pixel surpassing state of the art performances has been designed and optimized thanks to these advanced multiphysics simulations. Quantum efficiency of 40% is obtained and demodulation contrast of 89% at 200MHz is achieved while transfer gates operate at 1.0V biasing.
Bruno Henrique Lopes, Pascal Fonteneau, Boris Rodrigues Goncalves, Gabriel Mugny, Matteo Vignetti, Maryline Bawedin, Anne Kaminski, "Simulation of Indirect Time-of-flight Pixel Using High Frequency Operation Low Voltage Trench Gates" in Electronic Imaging, 2024, pp 287-1 - 287-5, https://doi.org/10.2352/EI.2024.36.7.ISS-287