With the development of various autofocusing (AF) technologies, sensor manufacturers are demanded to evaluate their performance accurately. The basic method of evaluating AF performance is to measure the time to get the refocused image and the sharpness of the image while repeatedly inducing the refocusing process. Traditionally, this process was conducted manually by covering and uncovering an object or sensor repeatedly, which can lead to unreliable results due to the human error and light blocking method. To deal with this problem, we propose a new device and solutions using a transparent display. Our method can provide more reliable results than the existing method by modulating the opacity, pattern, and repetition cycle of the target on the transparent display.
A single chip Photoplethysmography(PPG) sensor was developed for continuous measurements of heart rate from a mobile device. In order to utilize it in various mobile applications, it was necessary to achieve low power and small size of PPG sensors. For low power and small chip size of the PPG sensor, a photodiode(PD) for sensing signals and an analog front end(AFE) for signal amplification and ADC should be implemented in a single chip. The single chip PPG sensor which is implemented on a standard CMOS process with low operating voltage could be more suitable for mobile devices. In order to operate at a low voltage, reduction of Si thickness is required, and for this, high quantum efficiency(QE) of 43% at 940nm were obtained at 3um thickness by back side trench(BST) pattern and ARL optimization. In addition, to improve the performance of the PPG sensor, the leakage current of <0.1nA and capacitance of <200pF were measured by 20um pixel array. As a result, the low-power, small size single-chip PPG sensor showed similar performance to conventional high-voltage and large PPG sensor.
An indirect time-of-flight (ToF) CMOS image sensor has been designed with 4-tap 7 μm global shutter pixel in back-side illumination process. 15000 e- of high full-well capacity (FWC) per a tap of 3.5 μm pitch and 3.6 e- of read-noise has been realized by employing true correlated double sampling (CDS) structure with storage gates (SGs). Noble characteristics such as 86 % of demodulation contrast (DC) at 100MHz operation, 37 % of higher quantum efficiency (QE) and lower parasitic light sensitivity (PLS) at 940 nm have been achieved. As a result, the proposed ToF sensor shows depth noise less than 0.3 % with 940 nm illuminator in even long distance.
This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.
The presence of dark current, signal charge which is not due to photons, has been a performance limiter for image sensors. There has been a 5000x decrease over 40 years and there is the assumption that this trend will continue. However, the decrease has been accompanied by a change of the nature of the generation mechanism as is seen in characterization data related to voltages and temperature. The present limiting root cause of dark current needs to be determined to guide further improvement. It is also interesting to speculate on the ultimate limitation of dark current in defect-free silicon.