A route for the inkjet-printing of organic rectifying diodes based on Metal-Insulator-Semiconductor (MIS) structure is outlined. The proposed strategy is based on a layer stack of two silver electrodes between which a polyvinyl phenol (PVP) insulator layer and an amorphous organic semiconducting layer are sandwiched. Thanks to the energy barrier given by the presence of a leaky dielectric layer between the electrode and the semiconductor, the current versus voltage characteristics present a rectification ratio of up to 1.5*103 at |10 V| and a current density up to approximately 0.1mAcm-2. Finally, a first example of a gas sensor based on the MIS diode is presented as a proof-of-concept for the possible applications of these structures.
Silvia Conti, Carme Martinez-Domingo, Lluís Terés, Eloi Ramon, "A Study of the Potentiality of Inkjet-Printing Technique for the Fabrication of Metal-Insulator-Semiconductor Organic Rectifying Diodes" in Proc. IS&T Printing for Fabrication: Int'l Conf. on Digital Printing Technologies (NIP34), 2018, pp 5 - 9, https://doi.org/10.2352/ISSN.2169-4451.2018.34.5