The realization of high-quality oxide thin films for electronics applications through low-temperature solution deposition represents a singular challenge in processing chemistry. Traditionally, such processing has been accomplished through a selected sol-gel process usually involving organic precursors and a hydrolysis reaction. To convert hydrolysis products to oxide and fully eliminate precursor materials, a high-temperature annealing step is included. Of course, this high-temperature anneal diminishes the advantages of a low-temperature solution deposition; it also commonly leads to the occurrence of undesirable morphologies as well as fractured films through the phenomenon of mud cracking. In a thin-film device, it is especially important to be able to control film morphology and produce the desired functionality.In our work, we are examining new approaches to processing thin oxide films by eliminating organic precursors, identifying new materials systems, developing rapid condensation reactions that promote oxide formation at low temperatures, and investigating the formation and reactions of new nanolaminates. In this presentation, an overview of these approaches will be described with performance characteristics of films in MIM capacitors and transistors serving as examples of the final products.