Hewlett-Packard has recently demonstrated that thermal inkjet (TIJ) can be used to print a large variety of materials including organic solvent based systems, colloidal dispersions of nanoparticles, inorganic precursor solutions, polymer light emitting materials, color filters, and adhesives. This paper will discuss the integration of TIJ printed electronic materials (conductors, semiconductors, and dielectrics) to form thin-film transistors (TFTs). We have obtained field-effect mobilities of 3 to 4 cm2V−1s−1 for TFTs with TIJed semiconductor (channel), with on-to-off ratios of 106 - 107. TIJ-deposited gate dielectrics have shown a gate dielectric breakdown field >1 MV/cm, with maximum gate current leakage ∼2-5 nA/cm2.
David Punsalan, John Thompson, Peter Mardilovich, Chinmay Betrabet, Randy Hoffman, Greg Herman, Thomas Lindner, "Thermal Ink Jet Printing of Electronic Materials and Devices" in Proc. IS&T Digital Fabrication Conf., 2005, pp 128 - 130, https://doi.org/10.2352/ISSN.2169-4451.2005.21.2.art00042_3