The current time transients for photoinjected charge transport in smectic liquid crystals are analyzed in the context of the multiple trapping model. It is shown that they obey universality in the Laplace domain, in the sense that the curves for different voltages are determined by a single function, A(s), which contains all the information concerning trapping and detrapping in the material. The density of trap energies is extracted for two different phases. It is shown that the trap density is consistent with a Gaussian distribution having a width 50meV at low fields (E < 3 kV/cm). A transition occurs at high fields E > 3 kV/cm above which a multiple trapping analysis is no longer applicable.
David H. Dunlap, Akira Ohno, Jun-ichi Hanna, "Analysis of Trap Distribution Using Time of Flight Spectroscopy" in Proc. IS&T Int'l Conf. on Digital Printing Technologies (NIP19), 2003, pp 722 - 722, https://doi.org/10.2352/ISSN.2169-4451.2003.19.1.art00066_2