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Volume: 16 | Article ID: art00093_1
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Chemical Aging, Charge Transport, and Electroluminescence in Alq3-based Organic Light-Emitting Diodes
Keith A. Higginson
Mathew K. Mathai
Faquir Jain
Fotios Papadimitrakopoulos
Bing R. Hsieh
  DOI :  10.2352/ISSN.2169-4451.2000.16.1.art00093_1  Published Online :  January 2000
Abstract

Conduction in aluminum(III) 8-hydroxyquinoline (Alq3) was modeled based on trap-charge limited conduction of electrons in the bulk. The evolution of a narrow Gaussian distribution of localized trap states below the lowest unoccupied molecular orbital (LUMO) of Alq3, lying against a natural exponential background, was used to explain changes in the current-voltage characteristic and external quantum efficiency with time observed by many researchers for organic light-emitting diodes. Based on the change of the shape of the J-V curve, the depth of the electron trap states that were formed during aging was about 0.25 eV below the LUMO of Alq3. An increase in drive voltage and decrease in efficiency is predicted with aging by this model for current densities in a reasonable range, assuming that the evolved trap states are non-emissive and also non-quenching. The products of chemical aging can account for the generation of traps at the observed depth.

Journal Title : NIP & Digital Fabrication Conference
Publisher Name : Society of Imaging Science and Technology
Publisher Location : 7003 Kilworth Lane, Springfield, VA 22151, USA
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 DOI 10.2352/ISSN.2169-4451.2000.16.1.art00093_1
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Keith A. Higginson, Mathew K. Mathai, Faquir Jain, Fotios Papadimitrakopoulos, Bing R. Hsieh, "Chemical Aging, Charge Transport, and Electroluminescence in Alq3-based Organic Light-Emitting Diodes"  in Proc. IS&T Int'l Conf. on Digital Printing Technologies (NIP16),  2000,  pp 354 - 357,  https://doi.org/10.2352/ISSN.2169-4451.2000.16.1.art00093_1

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Copyright © Society for Imaging Science and Technology 2000
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NIP & Digital Fabrication Conference
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Society of Imaging Science and Technology
7003 Kilworth Lane, Springfield, VA 22151, USA
2169-4451(20000101)2000:1L.354;1-
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Articles
Chemical Aging, Charge Transport, and Electroluminescence in Alq3-based Organic Light-Emitting Diodes
HigginsonKeith A.
MathaiMathew K.
JainFaquir
PapadimitrakopoulosFotios
HsiehBing R.
01012000
2000
1
354
357
2000
Conduction in aluminum(III) 8-hydroxyquinoline (Alq3) was modeled based on trap-charge limited conduction of electrons in the bulk. The evolution of a narrow Gaussian distribution of localized trap states below the lowest unoccupied molecular orbital (LUMO) of Alq3, lying against a natural exponential background, was used to explain changes in the current-voltage characteristic and external quantum efficiency with time observed by many researchers for organic light-emitting diodes. Based on the change of the shape of the J-V curve, the depth of the electron trap states that were formed during aging was about 0.25 eV below the LUMO of Alq3. An increase in drive voltage and decrease in efficiency is predicted with aging by this model for current densities in a reasonable range, assuming that the evolved trap states are non-emissive and also non-quenching. The products of chemical aging can account for the generation of traps at the observed depth.