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Volume: 16 | Article ID: art00018_2
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Orientation of Polysilanes along the Film Thickness and their Properties
Yoshikazu Nakayama
Hiroyuki Inagi
Yukihiro Nagami
Junta Katayama
Lujun Pan
Seiji Akita
  DOI :  10.2352/ISSN.2169-4451.2000.16.1.art00018_2  Published Online :  January 2000
Abstract

The method to prepare polysilane films aligning along their thickness has been developed. Oriented polysilane films of (MeSiPh)n and (n-Hex2Si)n with the respective aligning of 84% and 94% of Si chains are demonstrated and their molecular orientations are investigated. The plane of phenyl rings are perpendicular to the aligned Si chains in the oriented (MeSiPh)n film and the plane of trans-planar of n-hexyl side chains is also perpendicular to the aligned Si chains in the oriented (n-Hex2Si)n. The carrier transport measurement indicates that the hole drift mobility is improved in the oriented films of (MeSiPh)n. However, it is not sufficient and its reason is discussed in terms of the energetic and positional disorders of the carrier hopping sites.

Journal Title : NIP & Digital Fabrication Conference
Publisher Name : Society of Imaging Science and Technology
Publisher Location : 7003 Kilworth Lane, Springfield, VA 22151, USA
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 DOI 10.2352/ISSN.2169-4451.2000.16.1.art00018_2
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Yoshikazu Nakayama, Hiroyuki Inagi, Yukihiro Nagami, Junta Katayama, Lujun Pan, Seiji Akita, "Orientation of Polysilanes along the Film Thickness and their Properties"  in Proc. IS&T Int'l Conf. on Digital Printing Technologies (NIP16),  2000,  pp 483 - 487,  https://doi.org/10.2352/ISSN.2169-4451.2000.16.1.art00018_2

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NIP & Digital Fabrication Conference
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Society of Imaging Science and Technology
7003 Kilworth Lane, Springfield, VA 22151, USA
2169-4451(20000101)2000:2L.483;1-
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Articles
Orientation of Polysilanes along the Film Thickness and their Properties
NakayamaYoshikazu
InagiHiroyuki
NagamiYukihiro
KatayamaJunta
PanLujun
AkitaSeiji
01012000
2000
2
483
487
2000
The method to prepare polysilane films aligning along their thickness has been developed. Oriented polysilane films of (MeSiPh)n and (n-Hex2Si)n with the respective aligning of 84% and 94% of Si chains are demonstrated and their molecular orientations are investigated. The plane of phenyl rings are perpendicular to the aligned Si chains in the oriented (MeSiPh)n film and the plane of trans-planar of n-hexyl side chains is also perpendicular to the aligned Si chains in the oriented (n-Hex2Si)n. The carrier transport measurement indicates that the hole drift mobility is improved in the oriented films of (MeSiPh)n. However, it is not sufficient and its reason is discussed in terms of the energetic and positional disorders of the carrier hopping sites.