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Volume: 16 | Article ID: art00018_2
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Orientation of Polysilanes along the Film Thickness and their Properties
  DOI :  10.2352/ISSN.2169-4451.2000.16.1.art00018_2  Published OnlineJanuary 2000
Abstract

The method to prepare polysilane films aligning along their thickness has been developed. Oriented polysilane films of (MeSiPh)n and (n-Hex2Si)n with the respective aligning of 84% and 94% of Si chains are demonstrated and their molecular orientations are investigated. The plane of phenyl rings are perpendicular to the aligned Si chains in the oriented (MeSiPh)n film and the plane of trans-planar of n-hexyl side chains is also perpendicular to the aligned Si chains in the oriented (n-Hex2Si)n. The carrier transport measurement indicates that the hole drift mobility is improved in the oriented films of (MeSiPh)n. However, it is not sufficient and its reason is discussed in terms of the energetic and positional disorders of the carrier hopping sites.

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Yoshikazu Nakayama, Hiroyuki Inagi, Yukihiro Nagami, Junta Katayama, Lujun Pan, Seiji Akita, "Orientation of Polysilanes along the Film Thickness and their Propertiesin Proc. IS&T Int'l Conf. on Digital Printing Technologies (NIP16),  2000,  pp 483 - 487,  https://doi.org/10.2352/ISSN.2169-4451.2000.16.1.art00018_2

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