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Volume: 15 | Article ID: art00096_2
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Epitaxially-Grown Oxadiazole Layers for Light Emitting Diodes
R. Fan
M.J. Turon
J.E. Langseth
G.G. Malliaras
S. Gu
L. Sukhomlinova
R.J. Twieg
  DOI :  10.2352/ISSN.2169-4451.1999.15.1.art00096_2  Published Online :  January 1999
Abstract

We use a simple epitaxial growth technique to prepare oriented layers from a liquid crystalline oxadiazole derivative. The high degree of molecular orientation in these layers is found to lead to a dramatic enhancement in the electrical characteristics of organic light emitting diodes.

Journal Title : NIP & Digital Fabrication Conference
Publisher Name : Society of Imaging Science and Technology
Publisher Location : 7003 Kilworth Lane, Springfield, VA 22151, USA
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 DOI 10.2352/ISSN.2169-4451.1999.15.1.art00096_2
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R. Fan, M.J. Turon, J.E. Langseth, G.G. Malliaras, S. Gu, L. Sukhomlinova, R.J. Twieg, "Epitaxially-Grown Oxadiazole Layers for Light Emitting Diodes"  in Proc. IS&T Int'l Conf. on Digital Printing Technologies (NIP15),  1999,  pp 751 - 753,  https://doi.org/10.2352/ISSN.2169-4451.1999.15.1.art00096_2

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Copyright © Society for Imaging Science and Technology 1999
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NIP & Digital Fabrication Conference
nip digi fabric conf
2169-4451
Society of Imaging Science and Technology
7003 Kilworth Lane, Springfield, VA 22151, USA
2169-4451(19990101)1999:2L.751;1-
nip_v1999n2/splitsection96.xml
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Articles
Epitaxially-Grown Oxadiazole Layers for Light Emitting Diodes
FanR.
TuronM.J.
LangsethJ.E.
MalliarasG.G.
GuS.
SukhomlinovaL.
TwiegR.J.
01011999
1999
2
751
753
1999
We use a simple epitaxial growth technique to prepare oriented layers from a liquid crystalline oxadiazole derivative. The high degree of molecular orientation in these layers is found to lead to a dramatic enhancement in the electrical characteristics of organic light emitting diodes.