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Volume: 15 | Article ID: art00090_2
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Amorphous Silicon Photoreceptors: Homogeneity of Electrophotographic Properties
F. Stahr
S. Röhlecke
K. Schade
M. Lutz
S. Dreihöfer
  DOI :  10.2352/ISSN.2169-4451.1999.15.1.art00090_2  Published Online :  January 1999
Abstract

Small pixel size or high resolution necessary for gray scale and color reproduction requires a high uniformity of the electrophotographic properties of the photoreceptor. The uniformity of the properties depends mainly on the thickness of thin layers and interfaces in the multilayer photoreceptor structure and doping uniformity. Structure and properties of a-Si:H photoreceptors meet these essential requirements. We investigated the preparation of a-Si:H photoreceptors and the electrophotographic properties: charge acceptance, dark decay, exposure-voltage-(E-V-) characteristic, residual potential and sensitivity. We have shown that an non-uniformity below ± 3 % in respect of the full photoreceptor surface can be achieved.

Journal Title : NIP & Digital Fabrication Conference
Publisher Name : Society of Imaging Science and Technology
Publisher Location : 7003 Kilworth Lane, Springfield, VA 22151, USA
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 DOI 10.2352/ISSN.2169-4451.1999.15.1.art00090_2
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F. Stahr, S. Röhlecke, K. Schade, M. Lutz, S. Dreihöfer, "Amorphous Silicon Photoreceptors: Homogeneity of Electrophotographic Properties"  in Proc. IS&T Int'l Conf. on Digital Printing Technologies (NIP15),  1999,  pp 728 - 731,  https://doi.org/10.2352/ISSN.2169-4451.1999.15.1.art00090_2

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Copyright © Society for Imaging Science and Technology 1999
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NIP & Digital Fabrication Conference
nip digi fabric conf
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Society of Imaging Science and Technology
7003 Kilworth Lane, Springfield, VA 22151, USA
2169-4451(19990101)1999:2L.728;1-
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Articles
Amorphous Silicon Photoreceptors: Homogeneity of Electrophotographic Properties
StahrF.
RöhleckeS.
SchadeK.
LutzM.
DreihöferS.
01011999
1999
2
728
731
1999
Small pixel size or high resolution necessary for gray scale and color reproduction requires a high uniformity of the electrophotographic properties of the photoreceptor. The uniformity of the properties depends mainly on the thickness of thin layers and interfaces in the multilayer photoreceptor structure and doping uniformity. Structure and properties of a-Si:H photoreceptors meet these essential requirements. We investigated the preparation of a-Si:H photoreceptors and the electrophotographic properties: charge acceptance, dark decay, exposure-voltage-(E-V-) characteristic, residual potential and sensitivity. We have shown that an non-uniformity below ± 3 % in respect of the full photoreceptor surface can be achieved.