Back to articles
Articles
Volume: 15 | Article ID: art00083_2
Image
The Structure-Photosensitivity Relationships of the Hydrazone-based Hole-transport Materials
Zhongping Huang
Qingsen Yu
Jinhong Pan
Ruisen Lin
Hanxing Zong
  DOI :  10.2352/ISSN.2169-4451.1999.15.1.art00083_2  Published Online :  January 1999
Abstract

The photosensitivities of a series of hydrazone-based hole-transport materials were correlated with their molecular structures. According to the electron density of the frontier orbital in the neutral molecule and cation radical of the charge transport material, the concept of the active hole-transport N atom was proposed. The relationships among photosensitivities, numbers of the active hole-transport N atom and the HOMO energy level of CTMs was investigated. The results showed that photosensitivity was strongly correlated to the numbers of the active hole-transport N atom and the HOMO energy level of CTMs. Therefore, it indicated that the hole injection process from CGL to CTL and hole transport process in CTL play significant role in photosensitivity.

Journal Title : NIP & Digital Fabrication Conference
Publisher Name : Society of Imaging Science and Technology
Publisher Location : 7003 Kilworth Lane, Springfield, VA 22151, USA
Subject Areas :
Views 6
Downloads 0
 DOI 10.2352/ISSN.2169-4451.1999.15.1.art00083_2
 articleview.views 6
 articleview.downloads 0
  Cite this article 

Zhongping Huang, Qingsen Yu, Jinhong Pan, Ruisen Lin, Hanxing Zong, "The Structure-Photosensitivity Relationships of the Hydrazone-based Hole-transport Materials"  in Proc. IS&T Int'l Conf. on Digital Printing Technologies (NIP15),  1999,  pp 699 - 702,  https://doi.org/10.2352/ISSN.2169-4451.1999.15.1.art00083_2

 Copy citation
  Copyright statement 
Copyright © Society for Imaging Science and Technology 1999
72010410
NIP & Digital Fabrication Conference
nip digi fabric conf
2169-4451
Society of Imaging Science and Technology
7003 Kilworth Lane, Springfield, VA 22151, USA
2169-4451(19990101)1999:2L.699;1-
nip_v1999n2/splitsection83.xml
/ist/nipdf/1999/00001999/00000002/art00083
Articles
The Structure-Photosensitivity Relationships of the Hydrazone-based Hole-transport Materials
HuangZhongping
YuQingsen
PanJinhong
LinRuisen
ZongHanxing
01011999
1999
2
699
702
1999
The photosensitivities of a series of hydrazone-based hole-transport materials were correlated with their molecular structures. According to the electron density of the frontier orbital in the neutral molecule and cation radical of the charge transport material, the concept of the active hole-transport N atom was proposed. The relationships among photosensitivities, numbers of the active hole-transport N atom and the HOMO energy level of CTMs was investigated. The results showed that photosensitivity was strongly correlated to the numbers of the active hole-transport N atom and the HOMO energy level of CTMs. Therefore, it indicated that the hole injection process from CGL to CTL and hole transport process in CTL play significant role in photosensitivity.