Back to articles
Volume: 15 | Article ID: art00075_2
Free-Volume Trapping in Charge Generating Layers
  DOI :  10.2352/ISSN.2169-4451.1999.15.1.art00075_2  Published OnlineJanuary 1999

The concept of free-volume trapping was first reported for single-layer aggregate (SLA) photoconductors.More recently, we have studied this phenomenon in multi-active photoconductors with separate charge generation and charge transport layers, CGL and CTL, respectively. We have found that trapping occurs in the CGL at weakly absorbed wavelength. It was proposed that excess free-volume amplified trapping by a dopant at the surface of the charge generating material enhanced recombination of the geminate hole pair, resulting in lower photoregeneration efficiency.In this work, we have studied the free-volume trapping phenomenon in multi-active photoconductors doped with molecules of various oxidation potentials. These studies have made it possible to isolate free-volume from intrinsic trapping. We have reconfirmed the role of the charge generation layer and the importance of surface and bulk charge generation. Free-volume trapping is dominant at trap depth below 0.2 V. Above that, intrinsic trapping completely dominates at the trap concentration level of the experiment. Lower trap concentration will most likely delay the dominance of intrinsic trapping.

Subject Areas :
Views 3
Downloads 0
 articleview.views 3
 articleview.downloads 0
  Cite this article 

Michel F. Molaire, Theodore Zubil, William Gruenbaum, "Free-Volume Trapping in Charge Generating Layersin Proc. IS&T Int'l Conf. on Digital Printing Technologies (NIP15),  1999,  pp 668 - 671,

 Copy citation
  Copyright statement 
Copyright © Society for Imaging Science and Technology 1999
NIP & Digital Fabrication Conference
nip digi fabric conf
Society of Imaging Science and Technology
7003 Kilworth Lane, Springfield, VA 22151, USA