Influence of H₂Pc doping and thermal annealing on photoconductivity of C₆₀ thin films were investigated. The photoconductive sensitivity increased remarkably over whole visible region in the H₂Pc-doped C₆₀ thin films before thermal annealing. While, the photoconductive sensitivity of the films increased remarkably in the wavelength region of 450-550nm after thermal annealing. The photoconductive sensitivity of C₆₀ thin films was high at low doping concentrations of H₂Pc, before thermal annealing. While, the photoconductive sensitivity was high at high doping concentrations of H₂Pc after thermal annealing. The temperature dependence of the dark conductivity was measured to assess the conduction type of the H₂Pc-doped C₆₀ thin films, and mechanisms for carrier generation and transport were discussed.