Back to articles
Volume: 14 | Article ID: art00042_2
Electron Trapping in N,N′-bis(1,2-dimethylpropyl)-1,4,5,8-Naphthalenetetracarboxylic Diimide Doped Poly(styrene)
  DOI :  10.2352/ISSN.2169-4451.1998.14.1.art00042_2  Published OnlineJanuary 1998

Electron mobilities have been measured in N,N′-bis(1,2-dimethylpropyl)-1,4,5,8-naphthalenetetracarboxylic diimide doped poly(styrene) containing a series of acceptor traps: 4-(cyanocarboethoxymethylidene)-2-methyl-1,4-naphthoquinone (MNQ), 3,5-dimethyl-3′,5′-diisopropyl-4,4′-diphenoquinone (DPQ), 4H-1,1-dioxo-2,6-di-tert-butyl-4-(dicyanomethylidene)thiopyran (TBS), N,N′-dicyano-2-tert-butyl-9,10-anthraquinonediimine (DCAQ), and 4H-1,1-dioxo-4-dicyanomethylidene-2-p-tolyl-6-phenylthiopyran (PTS). From reduction potential measurements, the trap depths of MNQ, DPQ, TBS, DCAQ, and PTS are 0.19, 0.19, 0.20, 0.35, and 0.40 eV, respectively. The mobilities decrease with increasing trap depth and trap concentration. The results are discussed within the framework of the Hoesterey-Letson formalism and the recent simulations of Wolf et al. and Borsenberger et al.

Subject Areas :
Views 5
Downloads 0
 articleview.views 5
 articleview.downloads 0
  Cite this article 

P. M. Borsenberger, W. T. Gruenbaum, E. H. Magin, S. A. Visser, D. E. Schildkraut, "Electron Trapping in N,N′-bis(1,2-dimethylpropyl)-1,4,5,8-Naphthalenetetracarboxylic Diimide Doped Poly(styrene)in Proc. IS&T Int'l Conf. on Digital Printing Technologies (NIP14),  1998,  pp 502 - 507,

 Copy citation
  Copyright statement 
Copyright © Society for Imaging Science and Technology 1998
NIP & Digital Fabrication Conference
nip digi fabric conf
Society of Imaging Science and Technology
7003 Kilworth Lane, Springfield, VA 22151, USA