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Volume: 14 | Article ID: art00042_2
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Electron Trapping in N,N′-bis(1,2-dimethylpropyl)-1,4,5,8-Naphthalenetetracarboxylic Diimide Doped Poly(styrene)
P. M. Borsenberger
W. T. Gruenbaum
E. H. Magin
S. A. Visser
D. E. Schildkraut
  DOI :  10.2352/ISSN.2169-4451.1998.14.1.art00042_2  Published Online :  January 1998
Abstract

Electron mobilities have been measured in N,N′-bis(1,2-dimethylpropyl)-1,4,5,8-naphthalenetetracarboxylic diimide doped poly(styrene) containing a series of acceptor traps: 4-(cyanocarboethoxymethylidene)-2-methyl-1,4-naphthoquinone (MNQ), 3,5-dimethyl-3′,5′-diisopropyl-4,4′-diphenoquinone (DPQ), 4H-1,1-dioxo-2,6-di-tert-butyl-4-(dicyanomethylidene)thiopyran (TBS), N,N′-dicyano-2-tert-butyl-9,10-anthraquinonediimine (DCAQ), and 4H-1,1-dioxo-4-dicyanomethylidene-2-p-tolyl-6-phenylthiopyran (PTS). From reduction potential measurements, the trap depths of MNQ, DPQ, TBS, DCAQ, and PTS are 0.19, 0.19, 0.20, 0.35, and 0.40 eV, respectively. The mobilities decrease with increasing trap depth and trap concentration. The results are discussed within the framework of the Hoesterey-Letson formalism and the recent simulations of Wolf et al. and Borsenberger et al.

Journal Title : NIP & Digital Fabrication Conference
Publisher Name : Society of Imaging Science and Technology
Publisher Location : 7003 Kilworth Lane, Springfield, VA 22151, USA
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 DOI 10.2352/ISSN.2169-4451.1998.14.1.art00042_2
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P. M. Borsenberger, W. T. Gruenbaum, E. H. Magin, S. A. Visser, D. E. Schildkraut, "Electron Trapping in N,N′-bis(1,2-dimethylpropyl)-1,4,5,8-Naphthalenetetracarboxylic Diimide Doped Poly(styrene)"  in Proc. IS&T Int'l Conf. on Digital Printing Technologies (NIP14),  1998,  pp 502 - 507,  https://doi.org/10.2352/ISSN.2169-4451.1998.14.1.art00042_2

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Copyright © Society for Imaging Science and Technology 1998
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NIP & Digital Fabrication Conference
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Society of Imaging Science and Technology
7003 Kilworth Lane, Springfield, VA 22151, USA
2169-4451(19980101)1998:2L.502;1-
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Articles
Electron Trapping in N,N′-bis(1,2-dimethylpropyl)-1,4,5,8-Naphthalenetetracarboxylic Diimide Doped Poly(styrene)
BorsenbergerP. M.
GruenbaumW. T.
MaginE. H.
VisserS. A.
SchildkrautD. E.
01011998
1998
2
502
507
1998
Electron mobilities have been measured in N,N′-bis(1,2-dimethylpropyl)-1,4,5,8-naphthalenetetracarboxylic diimide doped poly(styrene) containing a series of acceptor traps: 4-(cyanocarboethoxymethylidene)-2-methyl-1,4-naphthoquinone (MNQ), 3,5-dimethyl-3′,5′-diisopropyl-4,4′-diphenoquinone (DPQ), 4H-1,1-dioxo-2,6-di-tert-butyl-4-(dicyanomethylidene)thiopyran (TBS), N,N′-dicyano-2-tert-butyl-9,10-anthraquinonediimine (DCAQ), and 4H-1,1-dioxo-4-dicyanomethylidene-2-p-tolyl-6-phenylthiopyran (PTS). From reduction potential measurements, the trap depths of MNQ, DPQ, TBS, DCAQ, and PTS are 0.19, 0.19, 0.20, 0.35, and 0.40 eV, respectively. The mobilities decrease with increasing trap depth and trap concentration. The results are discussed within the framework of the Hoesterey-Letson formalism and the recent simulations of Wolf et al. and Borsenberger et al.