The introduction of iodide into (111) AgBr platelet crystals is known to induce the formation of structural defects, as well as enhance the photographic response of the resulting AgBrI. The incorporation of iodide, introduced uniformly during crystal growth, has been reported to form internal stacking faults, and more recently dislocation arrays. By using thermal processing to induce structural defects to regrow back into their matrix, it is possible to use this technique to probe specific defect characteristics, often at the microstructure level. In this article, we reported a detailed study of two iodide induced defects in (111) AgBrI crystals, using electron microscopy, to determine their location and structural characteristics, as well as to estimate their enthalpy of activation.
Samuel Chen, A. E. Taddei, S. Jagannathan, M. G. Antoniades, "Structural Characterization of Microscopic Defects in (111) AgBrI Microcrystals: Correlation of Stacking Fault Defects to Twin Boundary Morphology" in Journal of Imaging Science and Technology, 2001, pp 230 - 233, https://doi.org/10.2352/J.ImagingSci.Technol.2001.45.3.art00004