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Volume: 45 | Article ID: art00007
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Field Dependence of the Hole Transit-Time Dispersion in As-Cl Stabilized Amorphous Selenium X-ray Photoconductors
  DOI :  10.2352/J.ImagingSci.Technol.2001.45.1.art00007  Published OnlineJanuary 2001
Abstract

The tail region of the photocurrent transient observed in the conventional time-of-flight measurements has been experimentally studied as a function of the applied field and sample thickness for amorphous selenium stabilized with 0.2–0.3% As alloying and ∼10 ppm Cl doping (stabilized a-Se). The stabilized a-Se films used in the present study were typical x-ray photoconductors for use in x-ray imaging with a detector thickness in the range of 133–425 μm. Dispersions arising from the mutual Coulombic repulsion of charge carriers was found to give a noticable contribution to the total spread of the carrier packet even at relatively low injection level and extrapolating this function to zero injected charge. The hole transit time dispersion, ΔtTOF, reveals a power law electric field (F) dependence of the form ΔtTOFFn where n ≈ 1. It is shown that the observed dispersion cannot be interpreted on the basis of the multiple-trapping model nor conventional diffusion while the concept of charge carrier transport within a random potential landscape allows one to explain the observed field dependence of the hole photocurrent transients in terms of a Gaussian distribution of the effective carrier drift mobilities in which the normalized mobility spread Δμ/μ is 0.083 – 0.042.

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S. O. Kasap, C. Haugen, B. Polischuk, E. V. Emelianova, V. I. Arkhipov, "Field Dependence of the Hole Transit-Time Dispersion in As-Cl Stabilized Amorphous Selenium X-ray Photoconductorsin Journal of Imaging Science and Technology,  2001,  pp 30 - 36,  https://doi.org/10.2352/J.ImagingSci.Technol.2001.45.1.art00007

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Copyright © Society for Imaging Science and Technology 2001
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