The photocarrier generation kinetics in poly(methylphenylsilane) films with and without C₆₀ has been studied by measuring accurate subgap absorption spectra, absorption spectra contributing to photocurrent, and the normalized photoconductivity. The photoconduction spectrum of polysilane has 0.1 eV higher onset than the absorption. The photocarriers are not generated at the electrode, but in the bulk. These results suggest that the photocarriers are more likely photogenerated free-holes in a disordered system than photogenerated charged-polarons. The analysis based on a disorder model successfully explains the zero-temperature normalized photoconductivity. Doping of C₆₀ sensitizes efficiently the photoconduction of polysilane in the low photon-energy region where C₆₀ has optical absorption. This sensitization is suppressed at low temperatures. In the low temperature region, photogenerated holes are trapped in the tail states of polysilanes in a C₆₀ doped sample and consequently, the Fermi level moves to increase the dark and photoconductivity. The trapped holes recombine with electrons from C₆₀ at temperatures higher than 130 K.