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Volume: 43 | Article ID: art00012
Photocarrier Generation in Polysilane Films Doped With and Without Fullerene
  DOI :  10.2352/J.ImagingSci.Technol.1999.43.3.art00012  Published OnlineMay 1999

The photocarrier generation kinetics in poly(methylphenylsilane) films with and without C60 has been studied by measuring accurate subgap absorption spectra, absorption spectra contributing to photocurrent, and the normalized photoconductivity. The photoconduction spectrum of polysilane has 0.1 eV higher onset than the absorption. The photocarriers are not generated at the electrode, but in the bulk. These results suggest that the photocarriers are more likely photogenerated free-holes in a disordered system than photogenerated charged-polarons. The analysis based on a disorder model successfully explains the zero-temperature normalized photoconductivity. Doping of C60 sensitizes efficiently the photoconduction of polysilane in the low photon-energy region where C60 has optical absorption. This sensitization is suppressed at low temperatures. In the low temperature region, photogenerated holes are trapped in the tail states of polysilanes in a C60 doped sample and consequently, the Fermi level moves to increase the dark and photoconductivity. The trapped holes recombine with electrons from C60 at temperatures higher than 130 K.

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Y. Nakayama, A. Saito, T. Fujii, S. Akita, "Photocarrier Generation in Polysilane Films Doped With and Without Fullerenein Journal of Imaging Science and Technology,  1999,  pp 261 - 265,

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Copyright © Society for Imaging Science and Technology 1999
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