Up to now, backside illuminated (BSI) CMOS miniaturized pixels have been used and manufactured for visible (Vis) and/or near infrared (NIR) light. This work is focused on the performance under UV light, in the range of [200 nm, 400 nm], of such BSI CMOS miniaturized pixels, initially developed for the Vis and NIR spectrum in mind, which have been understudied until now. This performance evaluation is based on quantum efficiency (QE) measurements of various pixel types to examine how the good signal to noise ratio (SNR) in the Vis is modified in the UV spectrum. The pixels measured in this campaign are all miniaturized backside illuminated (BSI) CMOS because they have a better light to charge conversion compared to their frontside illuminated counterparts: the architecture offers the advantage of direct access the Si substrate and having a variety of possible thinner antireflection coating stacks (ARC) thanks to the evolution of CMOS BSI passivation techniques. Optical simulations had been performed to identify the key parameters that could play a role for the pixel’s response improvement in the UV. Despite the lack of any process optimization, we can observe significant response of the sensor under UV.