This paper presents a noise analysis and noise measurements of n-type and p-type pixels with correlated multiple sampling (CMS) technique. The output noise power spectral density (PSD) of both pixel types with different CMS noise reduction factors have been simulated and calculated in the spectral domain. For validation, two groups of test pixel have been fabricated with a state-of-the-art n-type and p-type CMOS image sensor (CIS) technology. The calculated and the measured noise results with CMS show a good agreement. Measurement results also show that the n-type and p-type pixels reach a 1.1 e- and 0.88 h+ input- referred temporal noise respectively with a board-level 64 times digital CMS and ×6 analog gain.