72010410

NIP & Digital Fabrication Conference

nip digi fabric conf

2169-4451

Society of Imaging Science and Technology

7003 Kilworth Lane, Springfield, VA 22151, USA

10.2352/ISSN.2169-4451.2001.17.1.art00031_2

2169-4451(20010101)2001:2L.572;1-

nip_v2001n2/splitsection31.xml

/ist/nipdf/2001/00002001/00000002/art00031

Articles

A Study of 1-dot Latent Image Potential

Aizawa

Kouichi

Takeshima

Motohiro

Kawakami

Haruo

01 01 2001

2001 2 572 575

2001

In order to make high resolution electrophotographic images, it is useful to know how well the 1-dot latent image potential is formed on the photoconductor. This report describes a new method of measuring micro-area surface potential profiles and analyzing the latent images. The results for 1-dot latent image potentials of negatively charged double layer organic photoconductors (OPC) and positively charged single layer OPC are presented. The dependencies on film thickness, photosensitivity and charge mobility are examined.